In-situ straining epitaxial process
US10644116B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Feb 6, 2014 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Feb 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/53
Abstract
A method includes forming a recess in a semiconductor substrate, the recess being adjacent to a gate stack, performing an epitaxial growth process within the recess to form a straining region, and forming a defect within the straining region in-situ with the epitaxial growth process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.