Thin film transistor, GOA circuit, display substrate and display device
US10644120B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 18, 2017 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Apr 18, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/506
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor is disclosed, comprising a first, second and third electrode. The first and second electrodes are arranged in a same layer and insulated from each other. The third electrode is arranged below and insulated from the first and second electrodes. The first electrode comprises at least one first conducting part. The second electrode comprises second conducting parts, each of which is arranged adjacent with each first conducting part. The third electrode is provided with an opening part at least partially overlapping with the first or second conducting part. If the first or second conducting part is subject to a channel defect due to short circuit, the first or second conducting part is cut off at an overlapping position with the opening part, to repair the channel defect without affecting the third electrode. A GOA circuit, a display substrate and a display device are further disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.