Active semiconductor device on high-resistivity substrate and method therefor
US10644148B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 7, 2018 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Jun 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
Abstract
An active semiconductor device, such as a laterally diffused metal oxide semiconductor (LDMOS) transistor, includes a substrate having a substrate resistivity of at least 1 kohm-cm. An active area of the active semiconductor device is formed in the substrate. A doped implant region is formed in the substrate surrounding the active area of the active semiconductor device and a field oxide region is formed over the doped implant region. The doped implant region may include a boron dopant. Methodology entails forming the doped implant region prior to formation of the field oxide region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.