Thin-film transistor, method of fabricating thin-film transistor, and display device
US10644165B2 · kind B2 · utility
0Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2018 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Jul 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A method of fabricating a thin-film transistor is provided. In the method, an oxide semiconductor layer is formed above a substrate. A gate insulating layer is formed above the oxide semiconductor layer. A gate electrode is formed above the gate insulating layer. A metal oxide layer is formed on the oxide semiconductor layer by reactive sputtering to reduce a resistance of the oxide semiconductor layer in a region in contact with the metal oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.