Reduction of surface recombination losses in micro-LEDs

US10644196B2 · kind B2 · utility

Assignee

• Facebook Technologies, LLC · US

Inventors

• Thomas Lauermann · Heilbronn, DE
• Stephan Lutgen · Regensburg, DE
• David Hwang · Fort Collins, US

Key dates

• Filing date: Mar 29, 2019
• Grant date: May 5, 2020
• Expiry date: Mar 29, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/812

Abstract

Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes reducing a lateral carrier diffusion in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. An outcoupling surface of the semiconductor layer has a diameter of less than 10 μm. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.