Method for the fabrication of indium-gallium nitride electrodes for electrochemical devices
US10644303B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2017 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Mar 14, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
It is described a method for realizing catalytically active electrochemical electrodes with maximized surface area. In the method, InGaN is deposited epitaxially in form of a thin layer on a Silicon substrate exposing a (111) crystal fac, thus forcing the InGaN electrode material to grow exposing a catalytically active surface. The substrate is then removed, the InGaN layer is made into fragments and these are transferred onto a conductive support with one-, two- or three-dimensional structure which can be a wire, a two-dimensional conductive foil which, possibly folded, or a three-dimensional conductive fabric, sponge or cage-like structure. It is thus possible to obtain an InGaN-based electrode with increased surface area and exposing surfaces with high catalytic activity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.