Semiconductor image sensor module and method of manufacturing the same
US10645324B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2017 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Jul 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/69
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.