Power transistor, driver and output stage including an active region, a metallization level, and a further metallization level

US10649021B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Alexander Mann · Munich, DE
• Daniel Schneider · Munich, DE
• Henning Lohmeyer · Reutlingen, DE

Key dates

• Filing date: Mar 1, 2017
• Grant date: May 12, 2020
• Expiry date: Mar 1, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H03K2217/0072
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A power transistor, a driver and an output stage. The power transistor includes an active region and a metallization level located above the active region for power distribution and for detecting an imminent metallization error induced by stress (RPP stress) caused by repeated power pulses. The power transistor also includes a further metallization level, which is located above the metallization level and in which galvanically isolated metal elements extend mutually parallel in a direction of extent, of which one pair is used for energizing the power transistor. It is a characteristic of the power transistor that at least one cut-out is formed above the active region in the further metallization level. The cut-out has the effect of decreasing heat dissipation. The power transistor is thereby heated more intensely in the localized region, so that large temperature gradients occur in the transition region defined by the edges of the metal elements.