Diffusion barriers
US10651082B2 · kind B2 · utility
0Cited by
1References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2016 |
| Grant date | May 12, 2020 |
| Priority date | — |
| Expiry date | Mar 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an example, there is disclosed a chemical compound, including a transition metal, a post-transition metal, a metalloid, and a nonmetal. By way of non-limiting example, the post-transition metal may be aluminum. The transition metal is selected from the group consisting of tungsten, tantalum, hafnium, molybdenum, niobium, zirconium, vanadium, and titanium. The metalloid may be boron or silicon. The nonmetal may be carbon or nitrogen. The compound may be used, for example, as a barrier material in an integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.