Semiconductor device and method for fabricating the same
US10651107B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2018 |
| Grant date | May 12, 2020 |
| Priority date | — |
| Expiry date | Sep 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a heat dissipation plate including a first region and a second region, a first element disposed on the heat dissipation plate in the first region, and a second element disposed on the heat dissipation plate in the second region. The first element includes a first substrate, the second element includes a second substrate, the first substrate includes a material different from a material of the second substrate, the first substrate contacts the heat dissipation plate, and the second element is bonded to the heat dissipation plate in a flip-chip bonding manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.