Patent · US Active

Semiconductor device

US10651161B2 · kind B2 · utility

2Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 1, 2018
Grant dateMay 12, 2020
Priority date
Expiry dateMay 11, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/1306
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

According to one embodiment, a semiconductor device includes a first transistor being normally-off, a second transistor being normally-on, and a first conductive member. The first transistor includes a first gate, a first source, a first drain, and a first semiconductor member. The first semiconductor member is provided between the first gate and the first drain and between the first source and the first drain. The second transistor includes a second gate, a second source, a second drain, and a second semiconductor member. An orientation from the first semiconductor member toward the first drain is the same as an orientation from the second semiconductor member toward the second gate, toward the second source, and toward the second drain. The first conductive member electrically connects the first drain and the second source.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.