Semiconductor device and method of fabricating the same
US10651191B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2018 |
| Grant date | May 12, 2020 |
| Priority date | — |
| Expiry date | Jan 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/681
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include a substrate, an electrode structure including electrodes stacked on the substrate, an upper semiconductor pattern penetrating at least a portion of the electrode structure, and a lower semiconductor pattern between the substrate and the upper semiconductor pattern. The upper semiconductor pattern includes a gap-filling portion and a sidewall portion extending from the gap-filling portion in a direction away from the substrate, the lower semiconductor pattern includes a concave top surface, the gap-filling portion fills a region enclosed by the concave top surface, a top surface of the gap-filling portion has a rounded shape that is deformed toward the substrate, and a thickness of the sidewall portion is less than a thickness of the gap-filling portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.