Semiconductor device and method for manufacturing same
US10651209B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2017 |
| Grant date | May 12, 2020 |
| Priority date | — |
| Expiry date | Jun 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76805
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a first thin film transistor (101) including a crystalline silicon semiconductor layer (13); and a second thin film transistor (102) including an oxide semiconductor layer (23). First source/drain electrodes (31), (33) of the first thin film transistor (101) are provided on the crystalline silicon semiconductor layer via a first interlevel dielectric layer (L1); a second source electrode (25S) of the second thin film transistor (102) is electrically connected to a line (35) which is made of the same conductive film as the first source/drain electrodes; the line (35) is provided on the second source electrode (25S) via a second interlevel dielectric layer (L2), and is in contact with the second source electrode (25S) within a second contact hole including an opening made in the second interlevel dielectric layer (L2); the second source electrode has a multilayer structure including a main layer (25m) and an upper layer (25u) disposed on the main layer such that, under the opening in the second interlevel dielectric layer, the upper layer (25u) has a first aperture and the main layer (25m) has a second aperture (p2) or recess, the second aperture (p2)…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.