Thin film transistor and method of manufacturing the same
US10651255B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2017 |
| Grant date | May 12, 2020 |
| Priority date | — |
| Expiry date | Nov 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2101/50
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed are a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a first organic semiconductor material and a second semiconductor layer including a second organic semiconductor material. The second semiconductor layer is farther spaced apart from the gate electrode than the first semiconductor layer. A HOMO energy level of the second organic semiconductor material is different from a HOMO energy level of the first organic semiconductor material. A method of manufacturing the thin film transistor is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.