Production method of capacitor structure, capacitor structure, and sensor
US10651267B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 17, 2019 |
| Grant date | May 12, 2020 |
| Priority date | — |
| Expiry date | Apr 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
There is provided a production method of a capacitor structure, having the following steps: forming a bottom electrode on a substrate; forming a sacrificial layer, which covers at least one part of the bottom electrode, on the substrate; forming a top electrode, which traverses the bottom electrode and covers at least one part of the sacrificial layer, on the substrate, such that a sacrificial layer is present at a part where an orthographic projection of the top electrode on the substrate and an orthographic projection of the bottom electrode on the substrate overlap; removing the sacrificial layer with a sacrificial layer removing solution to form an air gap. There are also provided a capacitor structure and a sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.