Method for avoiding IL regrown in a HKMG process
US10651285B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Feb 10, 2017 |
| Grant date | May 12, 2020 |
| Priority date | — |
| Expiry date | Feb 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure addresses and solves the current problem of oxygen accumulation in IL after an HKMG stack is formed. A fabrication method is provided for fabricating high-k/metal gate semiconductor device by forming at least one Titanium (Ti) layer between multiple HK layers. A high-k/metal gate semiconductor device including at least one TiO2 layer between multiple HK layers is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.