Semiconductor device and method of manufacturing the same
US10651301B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2018 |
| Grant date | May 12, 2020 |
| Priority date | — |
| Expiry date | May 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
Abstract
In one embodiment, a semiconductor device includes a semiconductor substrate having an upper surface, a trench electrode placed inside a trench formed on the upper surface, and a trench insulating film placed between the trench electrode and the semiconductor substrate, and the semiconductor substrate includes a drift layer, a floating layer for electric field reduction, a hole barrier layer, a body layer and an emitter layer, and the emitter layer, the body layer and the hole barrier layer are separated from the drift layer by the floating layer for electric field reduction, and a path of a carrier passing through an inverted layer formed in the body layer includes the body layer, the hole barrier layer, a non-inverted region of the floating layer for electric field reduction, and the drift layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.