Patent · US Active

Wide bandgap semiconductor switching device with wide area Schottky junction, and manufacturing process thereof

US10651319B2 · kind B2 · utility

0Cited by

2References

19Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Mario Giuseppe Saggio · Nettuno, IT
Simone RASCUNA' · San Gregorio di Catania, IT

Key dates

Filing date	Mar 18, 2019
Grant date	May 12, 2020
Priority date	—
Expiry date	Mar 18, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a first conductive material, which extends in contact with the front surface; and a plurality of buried regions, which have a second conductivity type and are arranged within the semiconductor body, at a distance from the contact layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.