Complementary metal-oxide semiconductor compatible patterning of superconducting nanowire single-photon detectors
US10651325B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2018 |
| Grant date | May 12, 2020 |
| Priority date | — |
| Expiry date | Dec 20, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/442
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A device includes a first semiconductor layer; a portion of a second semiconductor layer disposed on the first semiconductor layer; and a third semiconductor layer including a first region disposed on the portion of the second semiconductor layer and a second region disposed on the first semiconductor layer. A thickness of the first region is less than a predefined thickness. The device also includes an etch stop layer disposed on the third semiconductor layer; a plurality of distinct portions of a fourth semiconductor layer disposed on the etch stop layer and exposing one or more distinct portions of the etch stop layer over the portion of the second semiconductor layer; and a plurality of distinct portions of a superconducting layer disposed on the plurality of distinct portions of the fourth semiconductor layer and the exposed one or more distinct portions of the etch stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.