Patent · US Active

Light-emitting device

US10651344B2 · kind B2 · utility

7Cited by
0References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 14, 2019
Grant dateMay 12, 2020
Priority date
Expiry dateJan 14, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/825
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a surrounding part surrounding the semiconductor structure and exposing a surface of the first semiconductor layer; a first insulating structure formed on the semiconductor structure, including a plurality of protrusions covering the surface of the first semiconductor layer and a plurality of recesses exposing the surface of the first semiconductor layer; a first contact portion formed on the surrounding part and contacting the surface of the first semiconductor layer by the plurality of recesses; a first pad formed on the semiconductor structure; and a second pad formed on the semiconductor structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.