Storage element, storage device, method for manufacturing the same and driving method
US10651377B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 3, 2018 |
| Grant date | May 12, 2020 |
| Priority date | — |
| Expiry date | Aug 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
The present disclosure provides a storage element, a storage device, a method for manufacturing the same and a driving method. The method for manufacturing the storage element includes: providing a substrate; preparing a thin film transistor on the substrate; and preparing a storage functional pattern by using a phase change material, in which the storage functional pattern is connected to a drain electrode of the thin film transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.