Growing apparatus and single-crystal ingot growing method using the same
US10655242B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2018 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Nov 10, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B30/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A single-crystal ingot growing method includes setting a location of an MGP (maximum gauss position) of a magnetic field such that the MGP is located above the surface of a melt, setting a difference in intensity of the magnetic field between a center point of the melt and an edge point of the melt based on the set location of the MGP, setting an intensity of the magnetic field that is applied to the melt based on the set difference in intensity of the magnetic field, and growing a single-crystal ingot based on the set location of the MGP and the set intensity of the magnetic field. The magnetic field is a horizontal magnetic field, the MGP is spaced apart from the surface of the melt by a distance ranging from +50 mm to +150 mm, and the difference in intensity of the magnetic field ranges from 420G to 500G.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.