Plasma CVD device and method of manufacturing magnetic recording medium
US10657999B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2014 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Dec 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32532
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma CVD device includes a chamber (102), an anode (104), a cathode (103), a holding portion which holds a substrate to be deposited (101) a plasma wall (88) an anti-adhesion member (91) which is arranged between a first gap (81) between the anode and the plasma wall and a first inner surface (102a) of the chamber and a pedestal (92) which is arranged between the anti-adhesion member and a back surface of the anode and which is electrically connected to the anode. The maximum diameter of each of the first gap, a second gap (82) between the anode and the anti-adhesion member, a third gap (83) between the back surface of the anode and the pedestal, a fourth gap (84) between the plasma wall and the anti-adhesion member and a fifth gap (85) between the anti-adhesion member and the pedestal is equal to or less than 4 mm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.