Floating boosted pre-charge scheme for sense amplifiers
US10658048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2018 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Aug 16, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense structure includes: a sense amplifier core configured to compare a measurement current with a reference current; a cascode transistor coupled to the sense amplifier core and configured to be coupled to a load; a switch coupled between a bias voltage node and a control terminal of the cascode transistor; a local capacitor having a first terminal coupled to the control terminal of the cascode transistor; a first transistor coupled between a second terminal of the local capacitor and a reference terminal; and a control circuit coupled to a control terminal of the first transistor, the control circuit configured to disconnect the local capacitor from the reference terminal to produce a voltage overshoot in the control terminal of the cascode transistor, and after disconnecting the local capacitor from the reference terminal, limit or reduce the voltage overshoot by adjusting a voltage of the control terminal of the first transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.