Conductive paste for semiconductor device and preparation method
US10658090B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2019 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Mar 9, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A front-side conductive paste for a crystalline silicon solar cell chip is provided. The front-side conductive paste for a crystalline silicon solar cell chip includes, in parts by weight, 80.0-93.0 parts of a metal powder, 6.0-15.0 parts of an organic carrier, and 1.0-5.0 parts of an oxide etching agent. The oxide etching agent contains at least 10-40% of MgO, 0.1-5% of PbO, and 5-30% of Li2O based on 100% by mole, with the molar ratio of MgO:PbO being 10:5˜40:0.1, and the mole ratio of MgO:Li2O being 10:30˜40:5. The metal powder forms good ohmic contact with crystalline silicon substrate during the sintering process of the front-side conductive paste applied overlying an insulation film on the substrate. Finally, a front-side electrode of low contact resistance, good electrical conductivity, and strong adhesion is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.