Chemical mechanical polishing slurry composition and method for manufacturing semiconductor using the same
US10658196B2 · kind B2 · utility
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Key dates
| Filing date | Oct 25, 2018 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Oct 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A chemical-mechanical polishing slurry composition, comprising a polishing agent, an amine-based polishing activator, and a roughness adjusting agent, wherein the amine-based polishing activator is a tertiary or quaternary amine, and the roughness adjusting agent is a disaccharide. According to the slurry composition, the roughness of tungsten and silicon oxide films can be modified and the number of particles present on the wafer surface after polishing can be reduces so that defects of the wafer can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.