Semiconductor device
US10658324B2 · kind B2 · utility
1Cited by
20References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2018 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Aug 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3656
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: an insulating substrate; an aluminum pattern made of a pure aluminum or alloy aluminum material and formed on the insulating substrate; a plating formed on a surface of the aluminum pattern; and a semiconductor element joined to the plating, wherein a thickness of the plating is 10 μm or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.