Image sensors including shifted isolation structures
US10658411B2 · kind B2 · utility
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15References
20Claims
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Key dates
| Filing date | Feb 14, 2019 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Feb 14, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
Abstract
Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region. The image sensor includes first and second photoelectric conversion elements in the pixel region. The image sensor includes an isolation region between the first and second photoelectric conversion elements. The isolation region is off-center with respect to the pixel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.