Thin film transistor, array substrate, method for manufacturing the same, and display device
US10658516B2 · kind B2 · utility
1Cited by
3References
18Claims
0Family size
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Key dates
| Filing date | May 31, 2016 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Aug 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a thin film transistor, an array substrate, a method for manufacturing the same, and a display device. The method includes: forming a source and drain on a base substrate and forming a semiconductor layer. Between the step of forming the source and drain and the step of forming the semiconductor layer, the method further includes: forming a diffusion barrier layer. Metal atoms diffused from the source and drain and passing through the diffusion barrier layer react with a part of the semiconductor layer near the source and drain, and a metal transition layer containing metal silicide is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.