Magnesium zinc oxide-based high voltage thin film transistor
US10658518B2 · kind B2 · utility
0Cited by
0References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2017 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Aug 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6736
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Magnesium Zinc Oxide (MZO)—based high voltage thin film transistor (MZO-HVTFT) is built on a transparent substrate, such as glass. The device has the circular drain and ring-shaped source and gate to reduce non-uniformity of the electric field distribution. Controlled Mg doping in the channel and modulated Mg doping in a transition layer located at the channel-gate dielectric interface improve the device's operating stability and increase its blocking voltage capability over 600V. The MZO HVTFT can be used for fabricating the micro-inverter in photovoltaic system on glass (PV-SOG), and for self-powered smart glass.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.