Solar cells with improved lifetime, passivation and/or efficiency
US10658525B2 · kind B2 · utility
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Key dates
| Filing date | Dec 20, 2018 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Dec 20, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.