Method for manufacturing photoelectric conversion device
US10658537B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2018 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Jun 22, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
In manufacturing a crystalline silicon-based solar cell having an intrinsic silicon-based thin film and a conductive silicon-based thin film in this order on a conductive single-crystalline silicon substrate, plasma treatment is performed after the intrinsic silicon-based thin film is formed on the conductive single-crystalline silicon substrate. In the plasma treatment, a surface of the intrinsic silicon-based thin film is exposed to hydrogen plasma while a hydrogen gas and silicon-containing gases are being introduced into a CVD chamber. The amount of the hydrogen introduced into the CVD chamber during the plasma treatment is 150 to 2500 times the introduction amount of the silicon-containing gases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.