Selective growth of nitride buffer layer
US10658541B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2018 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Jul 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to at least some embodiments of the present disclosure, a method of manufacturing semiconductor wafers comprises: selectively growing a nitride buffer layer on a first surface of a patterned substrate, the patterned substrate including at least the first surface and a second surface; and growing an epitaxial layer on the nitride buffer layer, wherein a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate. The epitaxial layer does not include multiple crystal surfaces having different crystal growth directions that cause a stress at a junction interface where the crystal surfaces having the different crystal growth directions meet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.