Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

US10658548B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Fabian Kopp · Bukit Mertajam, MY
• Attila Molnar · Vadnais Heights, US

Key dates

• Filing date: Mar 16, 2017
• Grant date: May 19, 2020
• Expiry date: Mar 16, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/833

Abstract

A method for producing an optoelectronic semiconductor chip is specified, wherein a method step A) involves providing a semiconductor layer stack comprising a semiconductor layer of a first type, a semiconductor layer of a second type and an active layer arranged between the semiconductor layer of the first type and the semiconductor layer of the second type. Furthermore, the method comprises in a method step B) forming a mesa structure in the semiconductor layer of the first type, the semiconductor layer of the second type and the active layer. The method furthermore comprises in a method step C) applying a passivation layer to the mesa structure by means of vapour deposition or sputtering.