Radio-frequency isolated gate driver for power semiconductors
US10659036B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2019 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Feb 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0081
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A gate driver for power semiconductors is disclosed. The gate driver includes modulation to modulate signals from a controller to a radio frequency (RF) range that is much higher than frequencies associated with conducted EMI. The gate driver also includes RF transformer and tank circuit to that couples the modulated signals, filters EMI, and provides galvanic isolation. The gate driver further includes a RF demodulator and unfolder circuit for converting the RF signal into a signal appropriate for controlling the gate of a power semiconductor for switching. Additionally, the disclosed gate driver provides active gate control using programmable waveforms with values that can range over a continuous range of voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.