Spin current magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and high-frequency magnetic element
US10665375B2 · kind B2 · utility
4Cited by
2References
16Claims
0Family size
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Key dates
| Filing date | Aug 29, 2018 |
| Grant date | May 26, 2020 |
| Priority date | — |
| Expiry date | Aug 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure is directed to a spin current magnetization rotational element, a spin-orbit-torque magnetoresistance effect element, a magnetic memory, and a high-frequency magnetic element which can efficiently generate a pure spin current and reduce a reversal current density. The spin current magnetization rotational element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated in a second direction which intersects the first direction, wherein the spin-orbit torque wiring includes at least one rare gas element of Ar, Kr, and Xe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.