Surface treatment method for SiC substrate
US10665465B2 · kind B2 · utility
0Cited by
0References
16Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 17, 2015 |
| Grant date | May 26, 2020 |
| Priority date | — |
| Expiry date | May 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/304
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.