Heat treatment vessel for single-crystal silicon carbide substrate and etching method
US10665485B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2016 |
| Grant date | May 26, 2020 |
| Priority date | — |
| Expiry date | Oct 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6875
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heat treatment container (1) is provided with support members (6) for supporting a disc-shaped SiC substrate (2), which is an object, at a time of an etching treatment of the SiC substrate (2). Each of the support members (6) has an inclined surface (6F) for supporting a lower surface end (2E) of the SiC substrate (2), the inclined surface being inclined so as to increasingly approach the centerline of the SiC substrate (2) going downward. More specifically, each of the support members (6) is formed in a conical shape with a diameter that increases going downward, and a conical surface which is the peripheral surface of each supporting member forms the inclined surface (6F). A vertically-middle section of the inclined surface (6F) contacts the lower surface end (2E) of the SiC substrate (2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.