High dynamic range image sensors

US10665626B2 · kind B2 · utility

Inventors

• Cheng Zhao · San Jose, US
• Chen Lu · Longbeilingcun, CN
• Zhiqiang Lin · San Jose, US
• Dyson H. Tai · San Jose, US

Key dates

• Filing date: Apr 25, 2018
• Grant date: May 26, 2020
• Expiry date: May 26, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8067

Abstract

An image sensor comprises a first photodiode and a second photodiode having a smaller full-well capacitance than the first photodiode, wherein the second photodiode is adjacent to the first photodiode; a first micro-lens is disposed above the first photodiode and on an illuminated side of the image sensor; a second micro-lens is disposed above the second photodiode and on the illuminated side of the image sensor; and a coating layer disposed on both the first and second micro-lens, wherein the coating layer forms a flat top surface on the second micro-lens and a conformal coating layer on the first micro-lens.