Process for the generation of thin inorganic films

US10669297B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Torben Adermann · Ludwigshafen, DE
• Daniel LOEFFLER · Ludwigshafen, DE
• Hagen Wilmer · Ludwigshafen, DE
• Kerstin Schierle-Arndt · Zwingenberg, DE
• Jan Gerkens · Oettingen, DE
• Christian Volkmann · Oettingen, DE
• Sven Schneider · Oettingen, DE

Key dates

• Filing date: Nov 30, 2016
• Grant date: Jun 2, 2020
• Expiry date: Apr 9, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76841
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R1, R2 are an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R3, R4, and R5 are an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3.