Magnetoresistive device with bias magnetic field generation unit having main and side portions partially surrounding free layer perimeter
US10672421B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 6, 2019 |
| Grant date | Jun 2, 2020 |
| Priority date | — |
| Expiry date | Mar 6, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive device includes an MR element and a bias magnetic field generation unit. The MR element includes a free layer shaped to be long in one direction. The bias magnetic field generation unit includes a ferromagnetic layer for generating a bias magnetic field. The ferromagnetic layer includes two main portions, a first side portion, and a second side portion arranged to surround the perimeter of the free layer. In any cross section perpendicular to the longitudinal direction of the free layer, a shortest distance between the first side portion and the free layer and a shortest distance between the second side portion and the free layer are 35 nm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.