Integrated circuit with multi-threshold bulk FinFETs
US10672768B2 · kind B2 · utility
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38Claims
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Key dates
| Filing date | Mar 17, 2015 |
| Grant date | Jun 2, 2020 |
| Priority date | — |
| Expiry date | Oct 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
Abstract
A method for manufacturing a FinFET having a fin that has a fin body includes selecting a desired electrical performance parameter, selecting a base dimension of the fin, identifying a combination of fin-body doping and fin-geometry that causes the FinFET to have the desired electrical performance parameter, doping the fin body according to the identified fin-body doping, and fabricating the fin according to the fin-geometry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.