Patent · US Active

Integrated circuit device

US10672890B2 · kind B2 · utility

0Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 22, 2018
Grant dateJun 2, 2020
Priority date
Expiry dateOct 22, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/0188

Abstract

An integrated circuit device includes a substrate including a first device region and a second device region; a first fin separation insulating portion on the first device region; a pair of first fin-type active regions spaced from each other with the first fin separation insulating portion therebetween in the first device region and collinearly extending in a first horizontal direction; a second fin separation insulating portion extending in a second horizontal direction over the first device region and the second device region; and a pair of second fin-type active regions spaced from each other with the second fin separation insulating portion therebetween and collinearly extending in the first horizontal direction, wherein the first fin separation insulating portion and the second fin separation insulating portion vertically overlap each other.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.