GaN-based bidirectional switch device

US10672896B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Wanjun CHEN · Chengdu, CN
• Yijun Shi · Shanghai, CN
• Jie Liu · Houston, US
• Xingtao Cui · Chengdu, CN
• Guanhao Hu · Chengdu, CN
• Chao-Hsuan Liu · Zhuolan Township, TW
• Qi Zhou · Chengdu, CN
• Bo Zhang · Shanghai, CN

Key dates

• Filing date: Sep 5, 2017
• Grant date: Jun 2, 2020
• Expiry date: Sep 5, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691

Abstract

The present invention relates to the field of semiconductor switches, and relates more particularly to a GaN-based bidirectional switch device. The present invention provides a gate-controlled tunneling bidirectional switch device without Ohmic-contact, which avoids a series of negative effects (such as current collapse, incompatibility with traditional CMOS process) caused by the high temperature ohm annealing process. Each insulated gate structure near schottky-contact controls the band structure of the schottky-contact to change the working state of the device, realizing the bidirectional switch's ability of bidirectional conducting and blocking. Due to the only presence of schottky in this invention, no heavy elements such as gold is needed, and this device is compatible with traditional CMOS technology.