Power MOSFETs and methods for manufacturing the same
US10672904B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 19, 2019 |
| Grant date | Jun 2, 2020 |
| Priority date | — |
| Expiry date | Apr 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/813
Abstract
A semiconductor device and the method of manufacturing the same are provided. The semiconductor device comprises a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.