Wearable systems with fast-gated photodetector architectures having a single photon avalanche diode and capacitor
US10672936B2 · kind B2 · utility
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Key dates
| Filing date | Aug 9, 2019 |
| Grant date | Jun 2, 2020 |
| Priority date | — |
| Expiry date | Aug 9, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/4466
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A wearable system for use by a user includes a photodetector configured to detect a photon of a light pulse after the photon reflects from a target internal to the user. The photodetector includes a single photon avalanche diode (SPAD) and a capacitor configured to be charged, while the SPAD is in a disarmed state, with a bias voltage by a voltage source, and supply, when the SPAD is put in an armed state, the bias voltage to an output node of the SPAD such that a voltage across the SPAD is greater than a breakdown voltage of the SPAD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.