High-resistivity single crystal zinc oxide wafer based radiation detector and preparation method and use thereof
US10672940B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2018 |
| Grant date | Jun 2, 2020 |
| Priority date | — |
| Expiry date | Dec 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/93
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention discloses a high-resistivity single crystal zinc oxide (ZnO) wafer and a high-resistivity single crystal ZnO-based radiation detector, and preparation method and use thereof. The preparation method of the high-resistivity single crystal zinc oxide wafer is to place a single crystal ZnO wafer in a metal lithium electrochemical device for a constant-current discharge treatment, and then to place the single crystal ZnO wafer in a high-pressure oxygen atmosphere at 800 to 1000° C. and 10 to 30 atm for an annealing treatment for 20 to 28 hours. The preparation method of the radiation detector is to evaporate a metal electrode layer at both sides of the high-resistivity single crystal ZnO wafer, then to bond the wafer onto a circuit board, and to connect the wafer with the circuit board by a gold thread.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.