Methods for producing light extraction structures for semiconductor devices

US10672948B2 · kind B2 · utility

Assignee

• Saphlux, Inc. · US

Inventors

• Joo Won Choi · Ansan-si, KR
• Chen Chen · Branford, US

Key dates

• Filing date: Dec 15, 2017
• Grant date: Jun 2, 2020
• Expiry date: Dec 15, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

Aspects of the disclosure provide for mechanisms for fabricating light extraction structures for semiconductor devices (e.g., light-emitting devices). In accordance with some embodiments, a semiconductor device is provided. The semiconductor device may include: a first semiconductor layer including an epitaxial layer of a semiconductor material; a second semiconductor layer comprising an active layer; and a light-reflection layer configured to cause at least a portion of light produced by the active layer to emerge from the semiconductor device via a surface of the second semiconductor layer, wherein the light-reflection layer is positioned between the first semiconductor layer and the second semiconductor layer. In some embodiments, the semiconductor material includes gallium nitride. In some embodiments, the light-reflection layer includes a layer of gallium.