Flip-chip light emitting diode chip and fabrication method

US10672953B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• Weiping XIONG · Xiamen, CN
• Shu-fan YANG · Xiamen, CN
• Meijia YANG · Xiamen, CN
• Chun-Yi Wu · New Taipei, TW
• Chaoyu WU · Xiamen, CN
• Duxiang WANG · Xiamen, CN

Key dates

• Filing date: Oct 29, 2019
• Grant date: Jun 2, 2020
• Expiry date: Oct 29, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/835

Abstract

A light-emitting diode (LED) includes an epitaxial laminated layer with an upper surface and an opposing lower surface, the LED including: a first-type semiconductor layer; an active layer; and a second-type semiconductor layer. A portion of the first-type semiconductor layer and the active layer are etched to expose a portion of the second-type semiconductor layer; a first electrode and a second electrode are disposed over the lower surface of the epitaxial laminated layer; the first electrode is disposed over a surface of the first-type semiconductor layer; the second electrode is disposed over a surface of the exposed second-type semiconductor layer; a transparent medium layer over the upper surface of the epitaxial laminated layer, having a refractive index n1> 1.6; a transparent bonding medium layer over one upper surface of the transparent medium layer, having a refractive index n2<n1.