Switch bootstrap charging circuit suitable for gate drive circuit of GaN power device

US10673426B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Xin Ming · Chengdu, CN
• Li Hu · Chengdu, CN
• Xuan Zhang · Monroeville, US
• Su Pan · Seoul, KR
• Chunqi Zhang · Chengdu, CN
• Yao Qin · Zhejiang, CN
• Zhiwen Zhang · Austin, US
• Yangli Xin · Chengdu, CN
• Zhuo Wang · Suzhou, CN
• Bo Zhang · Shanghai, CN

Key dates

• Filing date: Jun 28, 2019
• Grant date: Jun 2, 2020
• Expiry date: Jun 28, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H03K2217/0081
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

A switch bootstrap charging circuit suitable for a gate drive circuit of a GaN power device includes a high-voltage MOSFET, a low-voltage MOSFET, a high-voltage MOSFET control module, and a low-voltage MOSFET control module. The low-voltage MOSFET is a PMOS transistor, and the source of the low-voltage MOSFET is connected to the power supply voltage. The drain of the high-voltage MOSFET serves as an output terminal of the switch bootstrap charging circuit. The low-voltage MOSFET control module and the high-voltage MOSFET control module generate a gate drive signal of the low-voltage MOSFET and a gate drive signal of the high-voltage MOSFET according to the gate drive signal of the lower power transistor.